• Materials Science
  • Published 2007

Investigation of InGaAs Strain Reducing Layer on the Redshift of PL Wavelength for InAs Quantum Dots

@inproceedings{Xiaomin2007InvestigationOI,
  title={Investigation of InGaAs Strain Reducing Layer on the Redshift of PL Wavelength for InAs Quantum Dots},
  author={Ren Xiao-min},
  year={2007}
}
A systematical investigation about the strain distributions around the InAs/GaAs quantum dots using the finite element method is presented. A special attention is paid to the influence of In0.2Ga0.8As strain reducing layer. The numerical results show that the horizontal and vertical strains components are reinforced in the InAs quantum dot due to the strain reducing layer. The hydrostatic strain and biaxial strain, which are significant to the electronic structure, are also increased in the… CONTINUE READING

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