Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)

@article{Seo2006InvestigationOH,
  title={Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)},
  author={J. Y. Seo and K. J. Lee and H. Kim and S. Y. Lee and S. S. Lee and W. Lee and Y. Kim and S. J. Hwang and C. Yoon},
  journal={2006 IEEE International Reliability Physics Symposium Proceedings},
  year={2006},
  pages={723-724}
}
  • J.Y. Seo, K.J. Lee, +6 authors C. Yoon
  • Published 2006
  • Materials Science
  • 2006 IEEE International Reliability Physics Symposium Proceedings
In this paper, first, it has been discussed hot carrier reliability in both Pch, RCAT and SRCAT. Second, we showed the origin of electric field suppression where the supply-voltage is applied at the same bias condition. Furthermore, we discuss the effects of ion implant process 
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Reliability for Recessed Channel Structure n-MOSFET
Systolic architectures for inversion/division using AB2 circuits in GF(2m)