Investigation of Gallium Nitride devices benefits on LLC resonant DC-DC converter

@article{Zhang2015InvestigationOG,
  title={Investigation of Gallium Nitride devices benefits on LLC resonant DC-DC converter},
  author={Weimin Zhang and Yutian Cui and Fei Fred Wang and Leon M. Tolbert and Benjamin J. Blalock and Daniel Costinett},
  journal={2015 IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2015},
  pages={146-153}
}
This paper investigates the Gallium Nitride (GaN) devices benefits on the LLC resonant DC-DC converter. First, the relationship between the device parameters and converter current based on an analytical loss model of LLC resonant converter has been established. After that, the loss analysis and comparison between Si-based and GaN-based converter is presented. The GaN-based design demonstrates about 40% loss reduction compared with the Si-based design. An insight on the extra winding loss due to… CONTINUE READING