Investigation of Electrical Stress in High Voltage IGBT Power Module Using Finite Element Simulations

@inproceedings{Chaudhari2013InvestigationOE,
  title={Investigation of Electrical Stress in High Voltage IGBT Power Module Using Finite Element Simulations},
  author={Mihir B. Chaudhari and Prasanta Kundu},
  year={2013}
}
With increase in the demand for electrical power conversion and control, new power electronic technologies are being developed rapidly. The power conversion is possible because of silicon power devices which are the most important components of any power electronic system. Among the power devices, insulated gate bipolar transistors (IGBT) are more accepted and widely used in various applications. The blocking voltage rating of the IGBT has increased up to 6.5kV which has resulted in higher… CONTINUE READING