Investigation of Defect Free SiGe Nanowire Biosensor Modified by Dual Plasma Technology.

Abstract

Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization… (More)

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Cite this paper

@article{Chen2016InvestigationOD, title={Investigation of Defect Free SiGe Nanowire Biosensor Modified by Dual Plasma Technology.}, author={Yi-Ming Chen and Tai-Yuan Chang and Chiung-Hui Lai and Kow-Ming Chang and Chu-Feng Chen and Yi-Lung Lai and Allen Jong-Woei Whang and Hui-Lung Lai and Terng-Ren Hsu}, journal={Journal of nanoscience and nanotechnology}, year={2016}, volume={16 2}, pages={1454-9} }