Investigation of Co/TaN bilayer as Cu diffusion barrier

Abstract

The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration was observed after annealing at 500°C for 30 min. Results show that Co/TaN has a good potential as cost effective adhesion/diffusion stack in copper metallization.

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Cite this paper

@article{Lu2010InvestigationOC, title={Investigation of Co/TaN bilayer as Cu diffusion barrier}, author={Hai-Sheng Lu and Shao-Feng Ding and Guo-Ping Ru and Yu-Long Jiang and Xin-Ping Qu}, journal={2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology}, year={2010}, pages={1045-1047} }