Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

@article{Ouyang2005InvestigationOC,
  title={Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates},
  author={Qiqing Ouyang and Min Yang and J R Holt and Sidhartha Panda and Huajie Chen and Haryono Utomo and M R Fischetti and Nivo Rovedo and Jinghong Li and N. Klymko and Horatio Wildman and Thomas Kanarsky and Greg Costrini and D. M. Fried and Andres Bryant and J. A. Ott and Meikei Ieong and Chun-Yung Sung},
  journal={Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.},
  year={2005},
  pages={28-29}
}
CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe. 
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