Investigation of CCM boost PFC converter efficiency improvement with 600V wide band-gap power semiconductor devices

@article{Mao2015InvestigationOC,
  title={Investigation of CCM boost PFC converter efficiency improvement with 600V wide band-gap power semiconductor devices},
  author={Saijun Mao and Ramanujam Ramabhadran and Jelena Popovic and Jan Abraham Ferreira},
  journal={2015 IEEE Energy Conversion Congress and Exposition (ECCE)},
  year={2015},
  pages={388-395}
}
Wide band-gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC) offer improved performance for power electronic devices compared to traditional Silicon (Si) power semiconductor devices. This paper investigates a 600V GaN & Silicon CoolMOS transistor application in 400W single phase continuous conduction mode (CCM) Boost PFC converter circuits with GaN, SiC and ultrafast silicon diodes and compares power semiconductor device efficiency benefits. The 600V GaN & Silicon CoolMOS… CONTINUE READING

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