Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET

@article{Fan2015InvestigationOB,
  title={Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET},
  author={Ming-Long Fan and Vita Pi-Ho Hu and Yin-Nien Chen and Chih-Wei Hsu and Pin Su and Ching-Te Chuang},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={107-113}
}
This paper investigates the impact of backgate biasing (V<sub>BS</sub>) on the drain current (I<sub>D</sub>) of ultrathin-body III-V heterojunction tunnel FET (HTFET). Compared with homojunction TFET and III-V/Ge MOSFET, this paper indicates that HTFET exhibits significantly higher I<sub>OFF</sub> (I<sub>D</sub> at VGS = 0 V and V<sub>DS</sub> = 0.5 V) modulation efficiency and the influence of V<sub>BS</sub> rapidly decreases with increasing V<sub>GS</sub>. In addition, it is observed that the… CONTINUE READING

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 23 references

Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

IEEE Transactions on Electron Devices • 2012
View 13 Excerpts
Highly Influenced

Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) • 2012
View 8 Excerpts
Highly Influenced

High Ion /Io f f and low subthreshold slope planartype InGaAs tunnel FETs with Zn-diffused source junctions

M. Noguchi
IEDM Tech. Dig., Dec. 2013, pp. 28.1.1–28.1.4. • 2013

Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

P. Guo
J. Appl. Phys., vol. 113, no. 9, p. 094502, 2013. • 2013
View 1 Excerpt

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE Transactions on Electron Devices • 2012
View 1 Excerpt