Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al<sub>2</sub>O<sub>3</sub> Surface Passivation and Sensing Membrane

Abstract

This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) to serve as a passivation layer and a sensing membrane at the same time. Al<sub>2</sub>O<sub>3</sub> was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found… (More)

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@article{Liu2016InvestigationOA, title={Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors With Al2O3 Surface Passivation and Sensing Membrane}, author={Han-Yin Liu and Wei-Chou Hsu and Wei-Fan Chen and Chih-Wei Lin and Yi-Ying Li and Ching-Sung Lee and Wen-Ching Sun and Sung-Yen Wei and Sheng-min Yu}, journal={IEEE Sensors Journal}, year={2016}, volume={16}, pages={3514-3522} }