Inversion mobility and gate leakage in high-k/metal gate MOSFETs

Abstract

For the first time, we show with simulation that the use of a metal gate/high-k stack offers improved mobility over polysilicon/high-k gates stacks while maintaining decreased gate leakage compared to conventional SiO/sub 2/ stacks, thus allowing high-performance transistor scaling to continue. 

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Cite this paper

@article{Kotlyar2004InversionMA, title={Inversion mobility and gate leakage in high-k/metal gate MOSFETs}, author={Roza Kotlyar and M. D. Giles and Philippe Matagne and Bojan Obradovi{\'c} and Lucian Shifren and M. Stettler and E. Wang}, journal={IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.}, year={2004}, pages={391-394} }