• Corpus ID: 246485739

Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications

  title={Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications},
  author={Albert Doblas and David Flores and Salvador Hidalgo and Neil Moffat and G. Pellegrini and David Quirion and Juan Esteban Villegas and Dzmitry Maneuski and Marie Ruat and Pablo Fajardo},
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD… 



Technology developments and first measurements on inverse Low Gain Avalanche Detector (iLGAD) for high energy physics applications

The first Inverse Low Gain Avalanche Detector (iLGAD) have been fabricated at IMB-CNM (CSIC). The iLGAD structure includes the multiplication diffusions at the ohmic contact side while the

50μmthin Low Gain Avalanche Detectors (LGAD) for timing applications

  • M. CarullaA. Doblas Y. Zhao
  • Physics
    Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • 2019

4D tracking with ultra-fast silicon detectors.

This work presents a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information, and presents the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking.

Recent progress in CdTe and CdZnTe detectors

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and /spl gamma/-ray detection. The high atomic number of the

High temperature GaAs X-ray detectors

Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to –20 °C. The devices had 10

Radiation detection and measurement

This book gives a simple overview and a logical development of the subject, and together with the DARE package enables the user to obtain a digital simulation of a continuous system without becoming overly involved in the intracacies of the simulation language itself.