Introducing Ohmic Contacts into Silicon Carbide Technology

  title={Introducing Ohmic Contacts into Silicon Carbide Technology},
  author={Zhongchang Wang and Susumu Tsukimoto and Mitsuhiro Saito and Yuichi Ikuhara},
The promising mechanical and electronic properties of silicon carbide (SiC) are stimulating extensive investigations focused on the applications of its semiconducting and excellent structure properties. As a matter of fact, the interest toward SiC is twofold. On one hand, it is a high-strength composite and high-temperature structural ceramic, demonstrating the ability to function at high-power and caustic circumstances. On the other hand, it is an attractive semiconductor, which has excellent… 

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power



Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific

Morphological study of the Al–Ti ohmic contact to p-type SiC

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC

The effect of the Al concentration and layer structure on the electrical and microstructural properties of TiAl Ohmic contacts for p-type 4H-SiC were investigated. The Al concentration was found to

Ti∕Ni bilayer Ohmic contact on 4H-SiC

Electric contact properties and interface structures of titanium/nickel (Ti∕Ni) bilayer Ohmic contact and the aluminum (Al) overlay on 4H silicon carbide (4H-SiC) were investigated. The Al overlay

Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC

Ohmic Contact Behavior of Carbon Films on SiC

We demonstrate ohmic contacts to SiC using carbon films after thermal annealing. Carbon films are deposited on 4H-SiC and 6H-SiC substrates using a radio frequency sputtering method. The carbon/SiC

Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC

We have investigated the roles of interfacial reaction, work function variation, and localized states of annealed Ti/Al ohmic contacts to p-type 4H-SiC. The Al was found to be absent in the near

Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing

We report on experiments to determine the mechanism of ohmic behavior of Al/Ti contacts to p-type SiC after thermal annealing. After ruling out heavy doping of the SiC surface due to diffusion of