Introducing Ohmic Contacts into Silicon Carbide Technology

@inproceedings{Wang2011IntroducingOC,
  title={Introducing Ohmic Contacts into Silicon Carbide Technology},
  author={Zhongchang Wang and Susumu Tsukimoto and Mitsuhiro Saito and Yuichi Ikuhara},
  year={2011}
}
The promising mechanical and electronic properties of silicon carbide (SiC) are stimulating extensive investigations focused on the applications of its semiconducting and excellent structure properties. As a matter of fact, the interest toward SiC is twofold. On one hand, it is a high-strength composite and high-temperature structural ceramic, demonstrating the ability to function at high-power and caustic circumstances. On the other hand, it is an attractive semiconductor, which has excellent… 

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power

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