Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit.

@article{Li2010IntrinsicTI,
  title={Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit.},
  author={Yanlu Li and G. C. Wang and Xiao-hua Zhu and Min-Hao Liu and Cun Ye and Xi Chen and Ya-Yu Wang and Ke He and Li-li Wang and Xuanlong Ma and Haijun Zhang and Xi Chun Dai and Zhong Fang and Xiaozhen Xie and Ying Liu and Xuexiang Qi and Jun Jia and Shou-Cheng Zhang and Qingyang Xue},
  journal={Advanced materials},
  year={2010},
  volume={22 36},
  pages={
          4002-7
        }
}
Layer-by-layer molecular beam epitaxy growth of high quality Bi 2 Te 3 fi lms has been achieved on Si(111) substrate. The Te-rich growth dynamics is found crucial for high quality stoichiometric Bi 2 Te 3 with few defects. In situ angle resolved photoemission spectroscopy (ARPES) measurement reveals that the as-grown Bi 2 Te 3 fi lms without any doping are an intrinsic topological insulator with its Fermi level intersecting only the metallic surface states, which is different from available… CONTINUE READING
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