Intrinsic noise currents in deep submicron MOSFETs

  title={Intrinsic noise currents in deep submicron MOSFETs},
  author={Chih-Hung Chen and M. Jamal Deen and Yuhua Cheng and Mishel Matloubian},
  journal={2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)},
  pages={835-839 vol.2}
A systemic extraction method to obtain the induced gate noise (i/sub g/i/sub g/*), channel thermal noise (i/sub d/i/sub d/*) and their cross-correlation term (i/sub g/i/sub d/*) in submicron MOSFETs directly from scattering and RF noise measurements is presented and verified with measurements. The extracted noise currents versus frequency, bias condition and channel length for MOSFETs from a 0.18 /spl mu/m CMOS process are presented and discussed. 


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H. Samavati, H. R. Rategh, T. H. Lee, Solid-state Circuits, IEEE Journal of Solid-state Circuits
35 Issue 5 pp. 765 - 772, May • 2000
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