Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces.

@article{Noguchi1991IntrinsicEA,
  title={Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces.},
  author={Noguchi and Hirakawa and Ikoma},
  journal={Physical review letters},
  year={1991},
  volume={66 17},
  pages={
          2243-2246
        }
}
The electronic structures of clean InAs (100) surfaces have been investigated by in situ high-resolution electron-energy-loss spectroscopy. Intrinsic electron accumulation layers with carrier densities strongly depending on the surface reconstruction are formed on both As-stabilized and In-stabilized surfaces. The correlation between the surface electron densities and the surface reconstructions suggests that electrons in the accumulation layers are induced by the donorlike intrinsic surface… CONTINUE READING

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