Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices

Abstract

Wedemonstratemonolayer(1L)MoS2 grown by chemical vapor deposition (CVD)with transport properties comparable to those of the best exfoliated 1L devices over awide range of carrier densities (up to∼10 cm) and temperatures (80–500 K). Transfer lengthmeasurements decouple the intrinsicmaterialmobility from the contact resistance, at practical carrier densities… (More)

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Cite this paper

@inproceedings{Pop2016IntrinsicET, title={Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices}, author={Eric Pop}, year={2016} }