Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots

  • S. De Rinaldis
  • Published 2008

Abstract

We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional directdiagonalization approach for the description of few-particle Coulombcorrelated states. We present a detailed analysis of the fundamental properties of few-particle/exciton interactions peculiar of nitride materials. The giant intrinsic electric fields and the high electron/hole effective masses give rise to different effects compared to GaAs-based quantum dots: intrinsic excitonexciton coupling, non-molecular character of coupled dot exciton wavefunction, strong dependence of the oscillator strength on the dot height, large

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Cite this paper

@inproceedings{Rinaldis2008IntrinsicEF, title={Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots}, author={S. De Rinaldis}, year={2008} }