Intrinsic and extrinsic performance limits of graphene devices on SiO2.

@article{Chen2008IntrinsicAE,
  title={Intrinsic and extrinsic performance limits of graphene devices on SiO2.},
  author={Jian‐Hao Chen and Chaun Jang and Shudong Xiao and Masa Ishigami and Michael S. Fuhrer},
  journal={Nature nanotechnology},
  year={2008},
  volume={3 4},
  pages={
          206-9
        }
}
The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2… Expand
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