# Intrinsic and extrinsic performance limits of graphene devices on SiO2.

@article{Chen2007IntrinsicAE,
title={Intrinsic and extrinsic performance limits of graphene devices on SiO2.},
author={Jianhao Chen and Chaun Jang and Shudong Xiao and Masa Ishigami and Michael S. Fuhrer},
journal={Nature nanotechnology},
year={2007},
volume={3 4},
pages={
206-9
}
}
• Published 23 November 2007
• Physics
• Nature nanotechnology
The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2…
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## References

SHOWING 1-10 OF 35 REFERENCES

### A self-consistent theory for graphene transport

• Physics
Proceedings of the National Academy of Sciences
• 2007
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to

### Giant intrinsic carrier mobilities in graphene and its bilayer.

• Physics
Physical review letters
• 2008
Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

### Substrate-limited electron dynamics in graphene

• Physics
• 2008
We study the effects of polarizable substrates such as $\mathrm{Si}{\mathrm{O}}_{2}$ and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening

### Electronic transport in graphene : A semiclassical approach including midgap states

• Physics
• 2007
Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the

### Temperature Dependence of the Average Mobility in Graphite

• Physics
• 1979
The average mobility (\barµ) of majority carriers evaluated from the magneto-resistance of highly oriented graphite through B 2 /( Δ ρ/ρ 0 )=( c /\barµ) 2 +O( B 2 ) is proportional to T -1.6 between

### Electron-phonon effects in graphene and armchair (10,10) single-wall carbon nanotubes

• Physics
• 1999
The electron-phonon interaction in low-dimensional tight-binding systems is discussed. A sheet of graphite, which is two-dimensional, and an armchair single-wall carbon nanotube ~SWNT!, which is

### Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

• Physics
• 2001
The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due to their large ionic polarizability. This is usually

### Electron-phonon interaction and transport in semiconducting carbon nanotubes.

• Physics
Physical review letters
• 2005
The electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model, is calculated and the mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula.

### Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

• Materials Science, Physics
• 2003
Current flow, considering a semiclassical electron--electric-field interaction and electron scattering by acoustic phonons, is studied in semiconducting zig-zag carbon nanotubes. The

### Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.

• Physics
Physical review letters
• 2005
These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime and are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure ofnanotubes.