Intrinsic and extrinsic performance limits of graphene devices on SiO2.

  title={Intrinsic and extrinsic performance limits of graphene devices on SiO2.},
  author={Jianhao Chen and Chaun Jang and Shudong Xiao and Masa Ishigami and Michael S. Fuhrer},
  journal={Nature nanotechnology},
  volume={3 4},
The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2… 

Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance

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The effect of field effect device channel dimensions on the effective mobility of graphene

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Phonon-limited mobility inn-type single-layer MoS2from first principles

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Unconventional Transport through Graphene on SrTiO3: A Plausible Effect of SrTiO3 Phase-Transitions

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Atomic-scale transport in epitaxial graphene.

Measurements show that scattering at two key defects--surface steps and changes in layer thickness--seriously degrades transport in epitaxial graphene films on SiC, demonstrating the strong impact of atomic-scale substrate features on graphene performance.

High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride.

D drift velocities in monolayer graphene encapsulated by hexagonal boron nitride (hBN) are much higher than those in silicon and in graphene on SiO2, likely due to reduced carrier scattering with surface optical phonons whose energy in hBN is higher than that in other substrates.

Electron-phonon interactions and the intrinsic electrical resistivity of graphene.

It is found that high-energy, optical, and zone-boundary phonons contribute as much as acoustic phonons to the intrinsic electrical resistivity even at room temperature and become dominant at higher temperatures.

High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high



A self-consistent theory for graphene transport

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Giant intrinsic carrier mobilities in graphene and its bilayer.

Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

Substrate-limited electron dynamics in graphene

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Electronic transport in graphene : A semiclassical approach including midgap states

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Temperature Dependence of the Average Mobility in Graphite

The average mobility (\barµ) of majority carriers evaluated from the magneto-resistance of highly oriented graphite through B 2 /( Δ ρ/ρ 0 )=( c /\barµ) 2 +O( B 2 ) is proportional to T -1.6 between

Electron-phonon effects in graphene and armchair (10,10) single-wall carbon nanotubes

The electron-phonon interaction in low-dimensional tight-binding systems is discussed. A sheet of graphite, which is two-dimensional, and an armchair single-wall carbon nanotube ~SWNT!, which is

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due to their large ionic polarizability. This is usually

Electron-phonon interaction and transport in semiconducting carbon nanotubes.

The electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model, is calculated and the mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula.

Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

Current flow, considering a semiclassical electron--electric-field interaction and electron scattering by acoustic phonons, is studied in semiconducting zig-zag carbon nanotubes. The

Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.

These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime and are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure ofnanotubes.