Intrinsic and extrinsic performance limits of graphene devices on SiO2.

  title={Intrinsic and extrinsic performance limits of graphene devices on SiO2.},
  author={Jian‐Hao Chen and Chaun Jang and Shudong Xiao and Masa Ishigami and Michael S. Fuhrer},
  journal={Nature nanotechnology},
  volume={3 4},
The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2… Expand
Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance
The contributions to the electrical resistance of monolayer and bilayer graphene are explored, revealing transitions between different regimes of charge carrier scattering, made possible by an approach of “differential-conductance mapping”, which allows us to suppress quantum corrections to reveal the underlying mechanisms governing the resistivity. Expand
The effect of field effect device channel dimensions on the effective mobility of graphene
Graphene is a possible candidate for post CMOS applications and mobility is a material characteristic that has been utilized to gauge the quality of the material[1]. Mobility of exfoliated grapheneExpand
Unconventional Transport through Graphene on SrTiO3: A Plausible Effect of SrTiO3 Phase-Transitions
A temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate shows an anomalous transport behavior in graphene on STO, and anomalies are discussed in the context of Coulomb as well as phonon scattering. Expand
Atomic-scale transport in epitaxial graphene.
Measurements show that scattering at two key defects--surface steps and changes in layer thickness--seriously degrades transport in epitaxial graphene films on SiC, demonstrating the strong impact of atomic-scale substrate features on graphene performance. Expand
Diffusive charge transport in graphene on SiO2
Abstract We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation ofExpand
High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride.
D drift velocities in monolayer graphene encapsulated by hexagonal boron nitride (hBN) are much higher than those in silicon and in graphene on SiO2, likely due to reduced carrier scattering with surface optical phonons whose energy in hBN is higher than that in other substrates. Expand
Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
Abstract We have extensively studied the electronic properties of epitaxial graphene grown on the Si face of a 6H silicon carbide substrate by thermal decomposition in an argon atmosphere. UsingExpand
Electron-phonon interactions and the intrinsic electrical resistivity of graphene.
It is found that high-energy, optical, and zone-boundary phonons contribute as much as acoustic phonons to the intrinsic electrical resistivity even at room temperature and become dominant at higher temperatures. Expand
High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected highExpand
Intrinsic Nature of Graphene Revealed in Temperature-Dependent Transport of Twisted Multilayer Graphene
Graphene in its purest form is expected to exhibit a semiconducting to metallic transition in its temperature-dependent conductivity as a result of the interplay between Coulomb disorder and phononExpand


A self-consistent theory for graphene transport
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary toExpand
Giant intrinsic carrier mobilities in graphene and its bilayer.
Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons. Expand
Substrate-limited electron dynamics in graphene
We study the effects of polarizable substrates such as $\mathrm{Si}{\mathrm{O}}_{2}$ and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadeningExpand
Electronic transport in graphene : A semiclassical approach including midgap states
Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that theExpand
Temperature Dependence of the Average Mobility in Graphite
The average mobility (\barµ) of majority carriers evaluated from the magneto-resistance of highly oriented graphite through B 2 /( Δ ρ/ρ 0 )=( c /\barµ) 2 +O( B 2 ) is proportional to T -1.6 betweenExpand
Electron-phonon effects in graphene and armchair (10,10) single-wall carbon nanotubes
The electron-phonon interaction in low-dimensional tight-binding systems is discussed. A sheet of graphite, which is two-dimensional, and an armchair single-wall carbon nanotube ~SWNT!, which isExpand
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
The high dielectric constant of insulators currently investigated as alternatives to SiO2 in metal–oxide–semiconductor structures is due to their large ionic polarizability. This is usuallyExpand
Electron-phonon interaction and transport in semiconducting carbon nanotubes.
The electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model, is calculated and the mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Expand
Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes
Current flow, considering a semiclassical electron--electric-field interaction and electron scattering by acoustic phonons, is studied in semiconducting zig-zag carbon nanotubes. TheExpand
Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors.
These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime and are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure ofnanotubes. Expand