Intrinsic and extrinsic performance limits of graphene devices on SiO2.

  title={Intrinsic and extrinsic performance limits of graphene devices on SiO2.},
  author={Jian-Hao Chen and C. Jang and S. Xiao and M. Ishigami and M. Fuhrer},
  journal={Nature nanotechnology},
  volume={3 4},
  • Jian-Hao Chen, C. Jang, +2 authors M. Fuhrer
  • Published 2008
  • Physics, Medicine
  • Nature nanotechnology
  • The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2… CONTINUE READING

    Topics from this paper.

    Ultrahigh electron mobility in suspended graphene
    • 5,364
    • PDF
    Boron nitride substrates for high-quality graphene electronics.
    • 4,062
    • PDF
    Two-Dimensional Phonon Transport in Supported Graphene
    • 1,286
    • PDF
    Measurement of the quantum capacitance of graphene.
    • 1,021
    Black phosphorus field-effect transistors.
    • 3,910
    • PDF


    Publications referenced by this paper.
    Giant intrinsic carrier mobilities in graphene and its bilayer.
    • 2,318
    • PDF
    A self-consistent theory for graphene transport
    • 880
    • PDF
    Electric Field Effect in Atomically Thin Carbon Films
    • 39,117
    • PDF
    Electronic Confinement and Coherence in Patterned Epitaxial Graphene
    • 4,339
    • PDF
    Raman spectrum of graphene and graphene layers.
    • 10,134
    • PDF
    Detection of individual gas molecules adsorbed on graphene.
    • 5,611
    • PDF