Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures

@article{Fantini2012IntrinsicSB,
  title={Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures},
  author={Andrea Fantini and D. J. Wouters and Robin Degraeve and Ludovic Goux and Luigi Pantisano and Gouri Sankar Kar and Y.-Y Chen and Bogdan Govoreanu and J. A. Kittl and Laith Altimime and Malgorzata Jurczak},
  journal={2012 4th IEEE International Memory Workshop},
  year={2012},
  pages={1-4}
}
In this work, we present a detailed electrical characterization of TiN\HfO2\Hf\TiN RRAM elements, and show for the first time the intrinsic switching characteristics in the low current operation regime (100uA till few uA's) of small scaled cells (20nm) under DC and fast ramps (up to 1MV/s) condition, using a newly proposed 2R test structure. The main characteristic parameters of the SET and RESET switching are defined and their speed dependence is characterized. Resistance decrease during SET… CONTINUE READING
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