Interpretation of double x-ray diffraction peaks from InGaN layers

  title={Interpretation of double x-ray diffraction peaks from InGaN layers},
  author={S. Pereira and Maria R. Correia and Estela Pereira and K. P. O'Donnell and Eduardo Alves and A. D. Sequeira and N. Franco},
  • S. Pereira, Maria R. Correia, +4 authors N. Franco
  • Published 2001
  • DOI:10.1063/1.1397276
The presence of two, or more, x-ray diffraction (XRD) peaks from an InGaN epilayer is sometimes regarded as an indicator of phase segregation. Nevertheless, detailed characterization of an InGaN/GaN bilayer by a combination of XRD and Rutherford backscattering spectrometry (RBS) shows that splitting of the XRD peak may be completely unrelated to phase decomposition. Wurtzite InGaN/GaN layers were grown in a commercial reactor. An XRD reciprocal space map performed on the (105) plane shows that… CONTINUE READING


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