Interplay between fermi surface topology and ordering in URu2Si2 revealed through abrupt hall coefficient changes in strong magnetic fields.


Temperature- and field-dependent measurements of the Hall effect of pure and 4% Rh-doped URu2Si2 reveal low density (0.03 hole/U) high mobility carriers to be unique to the "hidden order" phase and consistent with an itinerant density-wave order parameter. The Fermi surface undergoes a series of abrupt changes as the magnetic field is increased. When… (More)


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