Internal Structure Optimization of High Power Pulsed IMPATT Diodes

Abstract

On the basis of the numerical model that includes precise electrical and thermal sub-models, the extremely energy characteristics are investigated of a pulsed-mode Si double-drift IMPATT diodes for 94 and 140 GHz. The optimization of the internal structure of the diode with a traditional doping profile and with complex doping profile is provided… (More)

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10 Figures and Tables