Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

@article{Ross2017InterlayerEO,
  title={Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.},
  author={Jason V. Chen Stephen M. Ross and Pasqual Rivera and John R. Schaibley and Eric Lee-Wong and Hongyi Yu and Takashi Taniguchi and Kenji Watanabe and Jiaqiang Yan and David G Mandrus and David H Cobden and Wang Yao and Xiaodong Xu},
  journal={Nano letters},
  year={2017},
  volume={17 2},
  pages={638-643}
}
Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices… CONTINUE READING
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