Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator

Abstract

Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral… (More)

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