Interfacial phase-change memory.

  title={Interfacial phase-change memory.},
  author={R. Simpson and P. Fons and A. Kolobov and T. Fukaya and M. Krbal and T. Yagi and J. Tominaga},
  journal={Nature nanotechnology},
  volume={6 8},
Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible… Expand
Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the vonExpand
Understanding Phase-Change Memory Alloys from a Chemical Perspective
This work demonstrates that key to the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons and reveals previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys. Expand
Electrical pump-probe characterization technique for phase change materials
Phase change memory (PCM) is a high-speed, scalable, resistive non-volatile memory technology that utilizes melting followed by rapid resolidification and annealing above glass-transition temperatureExpand
Phase-Change Memory Materials
Phase-change materials are Te-containing alloys, typically lying along the GeTe-Sb2Te3 quasibinary tie line. Their ability to switch, reversibly and extremely quickly, between the crystalline andExpand
Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing, and it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. Expand
Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing
Phase-change memories based on reversible amorphous-crystal transformations in pseudobinary GeTe-Sb2Te3 alloys are one of the most promising nonvolatile memory technologies. The recently proposedExpand
Exploring the limits of phase change memories
  • M. Wuttig
  • Materials Science, Computer Science
  • DATE
  • 2014
It will be shown that the crystalline state of phase change materials is characterized by the occurrence of resonant bonding, a particular flavour of covalent bonding, employed to predict systematic property trends and to develop non-volatile memories with DRAM-like switching speeds potentially paving the road towards a universal memory. Expand
Quasicrystalline phase-change memory
  • Eun-Sung Lee, Joung E. Yoo, +13 authors Mann-Ho Cho
  • Medicine, Materials Science
  • Scientific Reports
  • 2020
A novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase- change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure is introduced. Expand
Avalanche atomic switching in strain engineered Sb2Te3–GeTe interfacial phase-change memory cells
By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient dataExpand
Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy
Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that theExpand


Resonant bonding in crystalline phase-change materials.
Measurements of the dielectric function in the energy range from 0.025 to 3 eV reveal that the optical dielectrics constant is 70-200% larger for the crystalline than the amorphous phases. Expand
Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials.
It is described for the first time how the entire write/erase cycle for the Ge(2)Sb-Te composition can be reproduced using ab initio molecular-dynamics simulations, and the microscopic insight provided on crystal nucleation should open up new ways to develop superior phase-change memory materials. Expand
Phase Change Meta-material and Device Characteristics
Green-IT has now been recognised as an influencing factor in the prevention of global warming and consequently non-volatile solid state memories, especially Magneto-Resistive Random Access MemoryExpand
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy.
It is demonstrated that distortions in the crystalline phase may trigger a collapse of long-range order, generating the amorphous phase without going through the liquid state. Expand
Computer‐simulation design of new phase‐change memory materials
Phase-change (PC) materials are being developed for a new non-volatile electronic-memory technology to replace flash memory. Fast, reversible transformations between amorphous and crystalline statesExpand
Phase change memory technology
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous andExpand
Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials.
This work uses a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Expand
Photoassisted amorphization of the phase-change memory alloy Ge 2 Sb 2 Te 5
Subnanosecond time-resolved x-ray absorption measurements have been used to probe dynamical changes in the local structure about Ge atoms in the phase-change alloyExpand
Understanding the phase-change mechanism of rewritable optical media
It is demonstrated that, different from the current consensus, Ge2Sb2Te5, the material of choice in DVD-RAM, does not possess the rocksalt structure but more likely consists of well-defined rigid building blocks that are randomly oriented in space consistent with cubic symmetry. Expand
Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory
Amorphous films having a component of the stoichiometric GeTe‐Sb2Te3 pseudobinary alloy system, GeSb2Te4 or Ge2Sb2Te5 representatively, were found to have featuring characteristics for optical memoryExpand