Interfacial phase-change memory.

@article{Simpson2011InterfacialPM,
  title={Interfacial phase-change memory.},
  author={R. Simpson and P. Fons and A. Kolobov and T. Fukaya and M. Krbal and T. Yagi and J. Tominaga},
  journal={Nature nanotechnology},
  year={2011},
  volume={6 8},
  pages={
          501-5
        }
}
Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible… Expand
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Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing, and it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. Expand
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TLDR
A novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase- change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure is introduced. Expand
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TLDR
Measurements of the dielectric function in the energy range from 0.025 to 3 eV reveal that the optical dielectrics constant is 70-200% larger for the crystalline than the amorphous phases. Expand
Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials.
TLDR
It is described for the first time how the entire write/erase cycle for the Ge(2)Sb-Te composition can be reproduced using ab initio molecular-dynamics simulations, and the microscopic insight provided on crystal nucleation should open up new ways to develop superior phase-change memory materials. Expand
Phase Change Meta-material and Device Characteristics
Green-IT has now been recognised as an influencing factor in the prevention of global warming and consequently non-volatile solid state memories, especially Magneto-Resistive Random Access MemoryExpand
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It is demonstrated that distortions in the crystalline phase may trigger a collapse of long-range order, generating the amorphous phase without going through the liquid state. Expand
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Phase change memory technology
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous andExpand
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TLDR
This work uses a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Expand
Photoassisted amorphization of the phase-change memory alloy Ge 2 Sb 2 Te 5
Subnanosecond time-resolved x-ray absorption measurements have been used to probe dynamical changes in the local structure about Ge atoms in the phase-change alloyExpand
Understanding the phase-change mechanism of rewritable optical media
TLDR
It is demonstrated that, different from the current consensus, Ge2Sb2Te5, the material of choice in DVD-RAM, does not possess the rocksalt structure but more likely consists of well-defined rigid building blocks that are randomly oriented in space consistent with cubic symmetry. Expand
Rapid‐phase transitions of GeTe‐Sb2Te3 pseudobinary amorphous thin films for an optical disk memory
Amorphous films having a component of the stoichiometric GeTe‐Sb2Te3 pseudobinary alloy system, GeSb2Te4 or Ge2Sb2Te5 representatively, were found to have featuring characteristics for optical memoryExpand
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