Interfacial phase-change memory.

@article{Simpson2011InterfacialPM,
  title={Interfacial phase-change memory.},
  author={R. Simpson and Paul Fons and A. Kolobov and T. Fukaya and M. Krbal and T. Yagi and J. Tominaga},
  journal={Nature nanotechnology},
  year={2011},
  volume={6 8},
  pages={
          501-5
        }
}
  • R. Simpson, Paul Fons, +4 authors J. Tominaga
  • Published 2011
  • Materials Science, Medicine
  • Nature nanotechnology
  • Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible… CONTINUE READING
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