Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6

@article{MFilippi2008InterfacialCT,
  title={Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6},
  author={M.Filippi and Bohdan Kundys and R Ranjith and Asish K. Kundu and Wilfrid Prellier},
  journal={Applied Physics Letters},
  year={2008},
  volume={92},
  pages={212905}
}
Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4∕3Co2∕3O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric… 
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