Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

@inproceedings{Hung2011InterfacialCE,
  title={Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors},
  author={Ting-Hsiang Hung and Michele Esposto and Siddharth Rajan},
  year={2011}
}
We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/ GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG… CONTINUE READING

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