Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology

@article{Nishi2007InterfacialSO,
  title={Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology},
  author={Yishio Nishi and Yoshishige Tsuchiya and Atsuhiro Kinoshita and Tomoyuki Yamauchi and Junji Koga},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={135-138}
}
It is demonstrated that Schottky barrier height (PhiB) for NiSi/Si junction can be modulated by interfacial segregation of metals. Thin films of rare earth (RE) metals and platinum (Pt) are deposited on NiSi/Si Schottky diodes and annealed. The metals diffuse into NiSi and segregate at NiSi/Si interface, which leads to PhiB modulation by 0.1 eV. Similar technique can be applied to PtSi/Si junction as well for advanced dual silicide process. 
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