Interface-state density of three dimensional silicon channels measured by charge pumping method

Recently, multi-gate and nanowire field-effect-transistors (FETs) with three-dimensional (3D) channels have drawing much interest because they have excellent short-channel-effect immunity due to better electrostatic control of the channel potential by gate electrodes. Therefore, the metal-oxide-semiconductor (MOS) transistor with 3D channels has been… CONTINUE READING