Interface-related in-plane optical anisotropy in GaAs Õ Al

@inproceedings{Chen2002InterfacerelatedIO,
  title={Interface-related in-plane optical anisotropy in GaAs {\~O} Al},
  author={Houtao Chen and X. L. Ye and Jian Z. Wang and Zuocai Wang and Z. Yang},
  year={2002}
}
The in-plane optical anisotropies of a series of GaAs/Al xGa12xAs single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. The measured degree of polarization of the excitonic transitions is inversely proportional to the well width. Numerical calculations based on the envelope function approximation incorporating the effect of C2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. Good agreement with the… CONTINUE READING