Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction

@article{Wang2001InterfaceIU,
  title={Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction},
  author={Howard Chih-Hao Wang and Chih-Chiang Wang and Chih-Sheng Chang and Tahui Wang and P S Griffin and C. H. Diaz},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={65-67}
}
This paper investigates anomalous diffusion behavior for ultra low energy implants in the extension or tip of PMOS devices. Transient enhanced diffusion (TED) is minimal at these low energies, since excess interstitials are very close to the surface. Instead, interface induced uphill diffusion is found, for the first time, to dominate during low temperature thermal cycles. The interface pile-up dynamics can be taken advantage of to produce shallower junctions and improve short channel effect… CONTINUE READING