Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.

@article{Zhang2013InterfaceinducedTI,
  title={Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.},
  author={Dong Zhang and Wenkai Lou and Maosheng Miao and Shou-Cheng Zhang and K. Chang},
  journal={Physical review letters},
  year={2013},
  volume={111 15},
  pages={156402}
}
We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to a topological insulator transition. Our work provides a new method to realize topological insulators… CONTINUE READING
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