Interface-Trap Driven NBTI for Ultrathin (EOT~12Å) Plasma and Thermal Nitrided Oxynitrides

@article{Gupta2006InterfaceTrapDN,
  title={Interface-Trap Driven NBTI for Ultrathin (EOT~12{\AA}) Plasma and Thermal Nitrided Oxynitrides},
  author={G. Gupta and Souvik Mahapatra and L. Leela Madhav and D. Varghese and K. Ahmed and F. Soleiman Nouri},
  journal={2006 IEEE International Reliability Physics Symposium Proceedings},
  year={2006},
  pages={731-732}
}
Negative bias temperature instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (DeltaVT) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (DeltaNIT) 

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