Interface Trap Density Metrology from Sub-Threshold Transport in Highly Scaled Undoped Si n-FinFETs

@article{Paul2011InterfaceTD,
  title={Interface Trap Density Metrology from Sub-Threshold Transport in Highly Scaled Undoped Si n-FinFETs},
  author={Abhijeet Paul and Giuseppe Carlo Tettamanzi and Sunhee Lee and Saumitra Raj Mehrotra and Nadine Colleart and S. Biesemans and Sven M. J. Rogge and Gerhard Klimeck},
  journal={Journal of Applied Physics},
  year={2011},
  volume={110},
  pages={124507}
}
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area (Saa) on three important parameters: (i) the gate bias (Vgs), (ii) the temperature, and (iii) the FinFET cross-section size. The quantitative difference… Expand
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