Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

@article{Kuzum2007InterfaceEngineeredG,
  title={Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility},
  author={Duygu Kuzum and A. Pethe and Tejas Krishnamohan and Yasuhiro Oshima and Yun Xu Sun and J. P. McVittie and P. Pianetta and P. C. Mclntyre and K. C. Saraswat},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={723-726}
}
The highest electron mobility to-date in Ge is reported. For the first time, the effect of surface orientation on mobility is investigated experimentally. Carrier scattering mechanisms are studied through low temperature mobility measurements. Ozone-oxidation has been introduced to engineer Ge/insulator interface. Minimum density of interface states (DD<sub>it</sub>) of 3x10<sup>11</sup> cm<sup>-2</sup> V<sup>-1</sup> is demonstrated and D<sub>it</sub> across the bandgap is extracted. 
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