# Interaction corrections to two-dimensional hole transport in thelarge−rslimit

@article{Noh2003InteractionCT, title={Interaction corrections to two-dimensional hole transport in thelarge−rslimit}, author={Hwayong Noh and Michael P. Lilly and Daniel C. Tsui and Jerry A. Simmons and E. H. Hwang and Sankar Das Sarma and Loren N. Pfeiffer and Ken W. West}, journal={Physical Review B}, year={2003}, volume={68}, pages={165308} }

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large r{sub s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The…

## 53 Citations

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