Interaction corrections to two-dimensional hole transport in thelarge−rslimit

@article{Noh2003InteractionCT,
  title={Interaction corrections to two-dimensional hole transport in thelarge−rslimit},
  author={Hwayong Noh and Michael P. Lilly and Daniel C. Tsui and Jerry A. Simmons and E. H. Hwang and Sankar Das Sarma and Loren N. Pfeiffer and Ken W. West},
  journal={Physical Review B},
  year={2003},
  volume={68},
  pages={165308}
}
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large r{sub s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The… 
Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
The interaction correction to the conductivity of 2D hole gas in strained GaAs/In$_x$Ga$_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and
Interactions in high-mobility 2D electron and hole systems
Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BT\tau /\hbar $ changes from 0.1 to 10
Screening-theory-based description of the metallic behavior in Si/SiGe two-dimensional electron systems
Motivated by recent experimental work we calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in two-dimensional (2D) high-mobility
Thermal correction to resistivity in dilute Si-MOSFET two-dimensional systems
Neglecting electron-electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas, taking into account the degeneracy and the
TWO-DIMENSIONAL HOLES IN GaAs HIGFETs: FABRICATION METHODS AND TRANSPORT MEASUREMENTS
We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in
Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction,
Coulomb drag near the metal-insulator transition in two dimensions
We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be
Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems
We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground plane on the metallic behavior in a GaAs two-dimensional hole
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 31 REFERENCES
Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime.
TLDR
It is shown that the "metallic" behavior of the resistivity of the low-density 2DHG is caused by the hole-hole interaction effect in this regime, and the Fermi-liquid interaction constant Fsigma0 which controls the sign of drho/dT is determined.
Interaction effects and the metallic phase in p-SiGe
Magnetoresistance results are presented for p-SiGe samples on the metallic side of the B=0 metal-insulator transition. The results cannot be understood within the framework of standard theories for
Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system
We find that at intermediate temperatures, the metallic temperature dependence of the conductivity σ(T) of two-dimensional electrons in silicon is described well by a recent interaction-based theory
Theory of finite-temperature screening in a disordered two-dimensional electron gas
A finite-temperature theory for the static screening of charged-impurity scattering in an electron layer is developed. The finite-temperature wave-vector-dependent electronic polarizability function
Spin polarization and g factor of a dilute GaAs two-dimensional electron system.
TLDR
While g(*) is indeed significantly enhanced with respect to the band g factor of GaAs, the enhancement factor decreases from about 6 to 3 as the density is reduced, the data reveal a surprising trend.
In-plane magnetoconductivity of Si MOSFETs: A quantitative comparison of theory and experiment
behavior of the conductivity of these strongly interacting electron systems using a Fermi liquid approach. Within this theory, the temperature and field dependence of the correction to the
Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures
We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated
Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure
We have fabricated undoped GaAs/AlxGa1−xAs heterojunctions in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface
WIGNER CRYSTALLIZATION AND METAL-INSULATOR TRANSITION OF TWO-DIMENSIONAL HOLES IN GAAS AT B = 0
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$,
Interaction corrections at intermediate temperatures: Longitudinal conductivity and kinetic equation
temperatures T τ > 1. We show that in this (ballistic) regime the temperature dependence of conductivity is still governed by the same physical processes as the Altshuler-Aronov corrections -
...
1
2
3
4
...