Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Abstract

By employing an interface protection technique to overcome the degradation of etched GaN surface in high-temperature process, highly reliable LPCVD-SiN<inf>x</inf> gate dielectric was successfully integrated with recessed-gate structure to achieve high-performance enhancement-mode (V<inf>th</inf> &#x223C; &#x002B;2.37 V @ I<inf>d</inf> &#x003D; 100 &#x03BC… (More)

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