Integrated waveguide p-i-n photodetector by MOVPE regrowth

Abstract

An InGaAs p-i-n photodetector for detection in the 1.0-1.6 µm wavelength range has been integrated at the end of a ridge waveguide in InP using a metal organic vapor phase epitaxial (MOVPE) regrowth technique. The waveguides had an average propagation loss of 3 dB/cm and 95 percent of the guided light was coupled into the photodetector. The photodetector… (More)

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