Integrated injection logic in a high-speed SiGe bipolar technology

@article{Aufinger2011IntegratedIL,
  title={Integrated injection logic in a high-speed SiGe bipolar technology},
  author={Klaus Aufinger and Herbert Knapp and S. Boguth and Oleksiy Gerasika and Rudolf Lachner},
  journal={2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2011},
  pages={87-90}
}
A device for integrated injection logic (I2L) circuits is implemented in a high speed bipolar technology without any changes to the underlying production process. Ring oscillator and frequency divider circuits are built with these devices and are experimentally characterized. A gate delay of 1 ns is obtained at a current of approximately 25 µA per stage. 

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