Integrated electro-chemical mechanical planarization (Ecmp) for future generation device technology

Abstract

A novel copper (Cu) planarization process, Ecmp, integrating electro-chemical mechanical polishing capability on a 300mm CMP platform with low down force conventional polishing processes is being developed and evaluated on low-k CVD devices. In the integrated Ecmp process, the bulk Cu is removed by electro-chemical mechanical polishing at a high rate which… (More)

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Cite this paper

@article{Economikos2004IntegratedEM, title={Integrated electro-chemical mechanical planarization (Ecmp) for future generation device technology}, author={Laertis Economikos and X. Wang and X. Sakamoto and Patrick Ong and M. Naujok and Robert J Knarr and L. Chen and Y. Moon and S. Neo and J. Salfelder and Alain Duboust and Antoine Manens and W. Lu and Suresh M. Shrauti and F. Liu and S. Tsai and W. Swart}, journal={Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)}, year={2004}, pages={233-235} }