Integrated GHz Voltage-Controlled Oscillators in a 47GHz SiGe Process

Abstract

In this work, two radio frequency (RF) voltagecontrolled oscillators (VCOs) are evaluated to determine feasibility for use in a high data rate wireless LAN. Designs are presented for a Colpitts oscillator and a differential L-C oscillator operating at 10GHz. The circuits are to be fabricated in a 3.3V 47GHz SiGe BiCMOS process, pushing the limits of the technology. Simulated phase noises of -95.0dBc/Hz for the Colpitts VCO implementation and -87.7dBc/Hz for the differential oscillator at offsets of 1MHz from the carrier are observed.

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Cite this paper

@inproceedings{Nakaska2003IntegratedGV, title={Integrated GHz Voltage-Controlled Oscillators in a 47GHz SiGe Process}, author={Joshua K. Nakaska and James W. Haslett}, year={2003} }