Integrally formed drain and source regions of transistor device containing a silicon / germanium

@inproceedings{Gehring2008IntegrallyFD,
  title={Integrally formed drain and source regions of transistor device containing a silicon / germanium},
  author={Andreas Gehring and Anthony Mowry and Casey Leigh Scott and Andy Wei},
  year={2008}
}
By repeatedly applying a process sequence of an etching process and a selective epitaxial wakeup process during the manufacture of drain and source regions in a transistor device very complex dopant profiles can be generated on the basis of an integrated doping. Further, a deformation material is provided, wherein Verspannungsrelaxationsmechanismen be reduced due to lack of implantation processes. 

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