Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation


A recent approach for low-frequency dispersion modeling of III-V FET devices using combined integral transform and state description is applied to an emerging AlGaN/GaN HEMT technology with a gatelength of 0.1 μm. The state-dependencies of the key parameters drain current, RF transconductance and output conductance, and the charge-control capacitances are… (More)


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