Insulated Gate P-I-N Transistor-a new MOS controlled switching power device

  • A. Q. Huang
  • Published 1995 in IEEE Electron Device Letters

Abstract

In this paper, a new monolithic MOS controlled power transistor structure called the Insulated Gate P-I-N Transistor (IGPT) is described for the first time and its operation is verified by two-dimensional numerical simulation. IGPT achieves an on-state voltage drop similar to that of a PIN diode, yet also provides insulated gate turn-off capability up to… (More)

Topics

4 Figures and Tables