Insights about reliability of Heterojunction Bipolar Transistor under DC stress

250GHz SiGe(C) Heterojunction Bipolar Transistor (HBT) is a high performance device with low noise figure and high transconductance particularly required in power RF circuits. Applications are various: 77GHz automotive radars, non invasive imaging in airport for example. In order to achieve such specification, aggressive design leads to use of HBT at high… CONTINUE READING