Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

@article{Duan2016InsightIE,
  title={Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging},
  author={Meng Duan and Jian Fu Zhang and Zhigang Ji and Wei Dong Zhang and D. Vigar and A. Asenov and Louis Gerrer and Vikas Chandra and Robert Aitken and Ben Kaczer},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={3642-3648}
}
The access transistor of SRAM can suffer both positive bias temperature instability (PBTI) and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 27 references

Energy distribution of positive charges in Al2O3GeO2/Ge pMOSFETs

  • J. Ma
  • IEEE Electron Device Lett., vol. 35, no. 2, pp…
  • 2014
Highly Influential
3 Excerpts

Energy and spatial distributions of electron traps throughout SiO2/Al2O3 stacks as the IPD in flash memory application

  • X. F. Zheng, W. D. Zhang, B. Govoreanu, D. R. Aguado, J. F. Zhang, J. Van Houdt
  • IEEE Trans. Electron Devices, vol. 57, no. 1, pp…
  • 2010
Highly Influential
4 Excerpts

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 Stack

  • J. Ma
  • IEEE Trans. Electron Devices, vol. 61, no. 5, pp…
  • 2014
1 Excerpt

Development of a technique for characterizing bias temperature instability-induced device-to-device variation at SRAMrelevant conditions

  • M. Duan
  • IEEE Trans. Electron Devices, vol. 61, no. 9, pp…
  • 2014

Impact of the gate-stack change from 40 nm node SiON to 28 nm high-K metal gate on the hot-carrier and bias temperature damage

  • A. Bravaix
  • Proc. IRPS, 2013, pp. 2D.6.1–2D.6.9.
  • 2013
2 Excerpts

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