Initiation Mechanism of Pulsed Surface Flashover along Silicon in Vacuum by Pre-breakdown Conduction and Photon Emission


Pre-breakdown (leakage) and breakdown currents and photon-emission associated with the currents, under impulse (0.36!10 IJ-S) voltage stress, along high purity (p>30 KQ em) silicon, with and without gold end contacts in vacuum (-lQ-6 Torr), are discussed. Three distinct phases leading to the breakdown condition are observed. These are one-carrier (hole… (More)