Inherent diode isolation in programmable metallization cell resistive memory elements

@inproceedings{Puthentheradam2011InherentDI,
  title={Inherent diode isolation in programmable metallization cell resistive memory elements},
  author={Sarath C. Puthentheradam and Dieter K. Schroder and Michael Kozicki},
  year={2011}
}
The feasibility of a storage element with inherent rectifying or isolation properties for use in passive memory arrays has been demonstrated using a programmable metallization cell structure with a doped (n-type) silicon electrode. The Cu/Cu–SiO2/n-Si cell used in this study switches via the formation of a nanoscale Cu filament in the Cu–SiO2 film which… CONTINUE READING