Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell

@article{Shim2012InherentIA,
  title={Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell},
  author={Keon-Soo Shim and Eun-Seok Choi and Sung-Wook Jung and Se-Hoon Kim and Hyun-Seung Yoo and Kwang-Sun Jeon and Han-Soo Joo and Jung-Seok Oh and Yoon-Soo Jang and Kyung-Jin Park and Sang-Moo Choi and Sang-Bum Lee and Jeong-Deog Koh and Ki-Hong Lee and Ju-Yeab Lee and Sang-Hyun Oh and Seung-Ho Pyi and Gyu-Seog Cho and Sung-Kye Park and Jin-Woong Kim and Seok-Kiu Lee and Sung-Joo Hong},
  journal={2012 4th IEEE International Memory Workshop},
  year={2012},
  pages={1-4}
}
Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and increased NOP (number of program) stress have been compared with 2D planar NAND Flash cell. In this paper, new program method pertinent to 3D NAND Flash memory was proposed to obtain program disturbance characteristics for MLC. 

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